| PART |
Description |
Maker |
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| LNA4602L |
GaAlAs Infrared Light Emitting Diode
|
Panasonic Semiconductor
|
| SE1003-C |
GaAlAs on GaAs infrared emitting diode.
|
NEC Electronics
|
| LNA2901L |
GaAs Infrared Light Emitting Diode 5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| TSSP4400 |
GaAs/GaAlAs Infrared Emitting Diode in Sideview Package
|
TEMIC Semiconductors
|
| TSML3710 |
GaAs/GaAlAs Infrared Emitting Diode in SMT Package
|
VISAY[Vishay Siliconix]
|
| LNA2606L |
HEADER, VERTICAL, 1ROW, 6WAY; Connector type:Wire-to-Board; Gender:Plug; Ways, No. of:6; Pitch, lead:2mm; Termination method:Solder; Material, contact:Brass; Plating, contact: Tin; Rows, No. of:1; Colour:White; Contacts, No. of:6; RoHS Compliant: Yes
GaAlAs on GaAs Infrared Light Emitting Diode
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| TSAL5300-FSZ TSAL5300-GSZ |
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| TSAL5100 |
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| TSAL5300-GSZ TSAL5300 TSAL5300-FSZ |
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
VISAY[Vishay Siliconix]
|
| TSAL620008 TSAL6200 |
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
